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Effect of Fe doping on optical properties of SI GaN bulk substrates suitable for MOVPE growths
- 1.0346192 - ÚFE 2011 DE eng C - Conference Paper (international conference)
Hulicius, Eduard - Gladkov, Petar - Fejfar, Antonín - Ledinský, Martin - Humlíček, J. - Šimeček, Tomislav - Paskova, T. - Evans, K.
Effect of Fe doping on optical properties of SI GaN bulk substrates suitable for MOVPE growths.
EWMOVPE 2009. Ulm: DOW Electronic Materials, 2009, s. 85-88.
[13th European Workshop on Metalorganic Vapor Phase Epitaxy. Ulm (DE), 07.06.2009-10.06.2009]
R&D Projects: GA MŠMT(CZ) LC06040
Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100521
Keywords : MOVPE
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Systematic study of optical properties of undoped and Fe-doped MOVPE substrates grown by hydride vapour phase epitaxy has revealed strong dependence of the photoluminescence, tansmission and reflection spectra upon the Fe-doping level.
Permanent Link: http://hdl.handle.net/11104/0187279
Number of the records: 1