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Related electrical and metallurgical properties of Pd/Zn/Ge and Pd/Zn/Pd/Au contact systems to p-InGaP
- 1.0303804 - URE-Y 20010026 RIV DE eng J - Journal Article
Malina, Václav - Vogel, K. - Ressel, P. - Pécz, B. - Dobos, L.
Related electrical and metallurgical properties of Pd/Zn/Ge and Pd/Zn/Pd/Au contact systems to p-InGaP.
Physica Status Solidi A. Roč. 184, č. 1 (2001), s. 139-144. ISSN 0031-8965
Grant - others:OTKA(DE) T020596
Institutional research plan: CEZ:AV0Z2067918
Keywords : semiconductor-metal boundaries * ohmic contacts * evaporation
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.025, year: 2001
The comparison of electrical and metallurgical properties of vacuum-evaporated Pd/Zn/Pd/Ge and Pd/Zn/Pd/Au contact metallizations to moderately doped p-InGaP epitaxial layers is presented. Both contacts exhibited excellent electrical properties when annealed at Tň400.sup.o.sup.C. On the other hand, the metalurgical stability of Pd/Zn/Pd/Ge contacs at higher temperatures was much better than that for Pd/Zn/Pd/Au, preserving a sharp and non-spiking contact-InGaP interface up to 490.sup.o.sup.C.
Permanent Link: http://hdl.handle.net/11104/0113988
Number of the records: 1