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InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors
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SYSNO 0563785 Title InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors Author(s) Liao, L. (CZ)
Wu, B. (CZ)
Kovalska, E. (CZ)
Oliveira, F.M. (CZ)
Azadmanjiri, J. (CZ)
Mazánek, V. (CZ)
Valdman, L. (CZ)
Spejchalova, L. (CZ)
Xu, C.Y. (CN)
Levinský, Petr (FZU-D) RID, ORCID
Hejtmánek, Jiří (FZU-D) RID, ORCID
Sofer, Z. (CZ)Source Title Nanoscale. Roč. 14, č. 14 (2022), s. 5412-5424. - : Royal Society of Chemistry Document Type Článek v odborném periodiku Grant GA18-12761S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Language eng Country GB Keywords indium selenide * 2D materials * photoelectrochemical measurements Permanent Link https://hdl.handle.net/11104/0335592
Number of the records: 1