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Investigation of Mg contact on SI-GaAs
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SYSNO ASEP 0560717 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Investigation of Mg contact on SI-GaAs Author(s) Dubecký, F. (SK)
Hubík, Pavel (FZU-D) RID, ORCID
Vanko, G. (SK)
Zaťko, B. (SK)
Boháček, P. (SK)
Sekáčová, M. (SK)
Šagátová, A. (SK)
Nečas, V. (SK)Number of authors 8 Source Title Proceedings of the 13th International Conference on Advanced Semiconductor Devices And Microsystems. - New York : IEEE, 2020 / Vanko G. ; Izsák T. - ISBN 978-1-7281-9776-0 Pages s. 147-151 Number of pages 5 s. Publication form Online - E Action International Conference on Advanced Semiconductor Devices And Microsystems - (ASDAM) /13./ Event date 11.10.2020 - 14.10.2020 VEvent location Smolenice Country SK - Slovakia Event type WRD Language eng - English Country US - United States Keywords semi-insulating GaAs ; contacts ; magnesium ; electron transport Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Institutional support FZU-D - RVO:68378271 UT WOS 000669651600034 EID SCOPUS 85104521393 DOI 10.1109/ASDAM50306.2020.9393847 Annotation We present an anomal current decrease for Mg contact on semi-insulating (SI) GaAs. The explanation of the observed effect is discussed within the light of the observed transport characteristics and XPS analysis. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2023
Number of the records: 1