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Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications
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SYSNO 0556457 Title Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications Author(s) Volodin, V.A. (RU)
Krivyakin, G.K. (RU)
Bulgakov, Alexander (FZU-D) ORCID
Levy, Yoann (FZU-D)
Beránek, Jiří (FZU-D)
Nagisetty, Siva S. (FZU-D)
Bryknar, Z. (CZ)
Bulgakova, Nadezhda M. (FZU-D) ORCID
Geydt, P.V. (RU)
Popov, A. A. (RU)Source Title Proceedings of SPIE - The International Society for Optical Engineering. - Bellingham : SPIE, 2022 / Lukichev V.F. ; Rudenko K.V. Conference International Conference on Micro- and Nano-Electronics /14./, 04.10.2021 - 08.10.2021, Zvenigorod Article number 1215702 Document Type Konferenční příspěvek (zahraniční konf.) Grant CZ.02.1.01/0.0/0.0/15_003/0000445, XE - EU countries EF15_003/0000445 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CZ.02.1.01/0.0/0.0/15_006/0000674, XE - EU countries EF15_006/0000674 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LO1602 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Language eng Country US Keywords Ge/Si multi-nanolayers * picosecond infrared pulsed laser annealing * Raman spectroscopy * nonlinear efffects in light absorption URL https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12157/2622731/Picosecond-infrared-laser-crystallization-of-Ge-layers-in-Ge-Si/10.1117/12.2622731.short Permanent Link http://hdl.handle.net/11104/0330692
Number of the records: 1