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Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications
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SYSNO ASEP 0556457 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications Author(s) Volodin, V.A. (RU)
Krivyakin, G.K. (RU)
Bulgakov, Alexander (FZU-D) ORCID
Levy, Yoann (FZU-D)
Beránek, Jiří (FZU-D)
Nagisetty, Siva S. (FZU-D)
Bryknar, Z. (CZ)
Bulgakova, Nadezhda M. (FZU-D) ORCID
Geydt, P.V. (RU)
Popov, A. A. (RU)Number of authors 10 Article number 1215702 Source Title Proceedings of SPIE - The International Society for Optical Engineering. - Bellingham : SPIE, 2022 / Lukichev V.F. ; Rudenko K.V. - ISSN 0277-786X Number of pages 10 s. Publication form Print - P Action International Conference on Micro- and Nano-Electronics /14./ Event date 04.10.2021 - 08.10.2021 VEvent location Zvenigorod Country RU - Russian Federation Event type WRD Language eng - English Country US - United States Keywords Ge/Si multi-nanolayers ; picosecond infrared pulsed laser annealing ; Raman spectroscopy ; nonlinear efffects in light absorption Subject RIV BH - Optics, Masers, Lasers OECD category Optics (including laser optics and quantum optics) R&D Projects EF15_003/0000445 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) EF15_006/0000674 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LO1602 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 EID SCOPUS 85125629463 DOI 10.1117/12.2622731 Annotation The processes involved in picosecond infrared pulsed laser annealing of multylayer structures consisting of alternating thin films of amorphous silicon and germanium were investigated. The films were fabricated by plasma-chemical deposition on Si(001) and glass substrates. An analysis of structural transformation of Ge/Si multi-nanolayers was performed using Raman spectroscopy. Regimes of annealing were found when the Ge layers are partially crystallized while the Si layers remain amorphous without noticeable intermixing of Ge and Si. The developed approach can be used for creation of GeSi solid alloys (which can be used in memristors on not refractive substrates) and also for creation of Si based p-i-n structures on non-refractory substrates with Ge nanoclusters in i-layer, that can enhance the efficiency of thin film solar cells. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2023 Electronic address https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12157/2622731/Picosecond-infrared-laser-crystallization-of-Ge-layers-in-Ge-Si/10.1117/12.2622731.short
Number of the records: 1