Number of the records: 1
Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications
- 1.0556457 - FZÚ 2023 RIV US eng C - Conference Paper (international conference)
Volodin, V.A. - Krivyakin, G.K. - Bulgakov, Alexander - Levy, Yoann - Beránek, Jiří - Nagisetty, Siva S. - Bryknar, Z. - Bulgakova, Nadezhda M. - Geydt, P.V. - Popov, A. A.
Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications.
Proceedings of SPIE - The International Society for Optical Engineering. Bellingham: SPIE, 2022 - (Lukichev, V.; Rudenko, K.), č. článku 1215702. 12157. ISSN 0277-786X.
[International Conference on Micro- and Nano-Electronics /14./. Zvenigorod (RU), 04.10.2021-08.10.2021]
R&D Projects: GA MŠMT EF15_003/0000445; GA MŠMT EF15_006/0000674; GA MŠMT LO1602
Grant - others:OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445; OP VVV - HiLASE-CoE(XE) CZ.02.1.01/0.0/0.0/15_006/0000674
Institutional support: RVO:68378271
Keywords : Ge/Si multi-nanolayers * picosecond infrared pulsed laser annealing * Raman spectroscopy * nonlinear efffects in light absorption
OECD category: Optics (including laser optics and quantum optics)
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12157/2622731/Picosecond-infrared-laser-crystallization-of-Ge-layers-in-Ge-Si/10.1117/12.2622731.short
Permanent Link: http://hdl.handle.net/11104/0330692
Number of the records: 1