Number of the records: 1
Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications
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$a Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications 215 $a 10 s. $c P 463 -1
$1 001 cav_un_epca*0556456 $1 011 $a 0277-786X $1 200 1 $a Proceedings of SPIE - The International Society for Optical Engineering $1 210 $a Bellingham $c SPIE $d 2022 $1 225 $v 12157 $1 702 1 $a Lukichev $b V.F. $4 340 $1 702 1 $a Rudenko $b K.V. $4 340 610 $a Ge/Si multi-nanolayers 610 $a picosecond infrared pulsed laser annealing 610 $a Raman spectroscopy 610 $a nonlinear efffects in light absorption 700 -1
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Number of the records: 1