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Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications
- 1.Volodin, V.A., Krivyakin, G.K., Bulgakov, A., Levy, Y., Beránek, J., Nagisetty, S. S., Bryknar, Z., Bulgakova, N. M., Geydt, P.V., Popov, A. A. Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications. In: LUKICHEV, V.F., RUDENKO, K.V., eds. Proceedings of SPIE - The International Society for Optical Engineering. Bellingham: SPIE, 2022, č. článku 1215702. ISSN 0277-786X. Available: doi: 10.1117/12.2622731.
Number of the records: 1