Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications

VOLODIN, V.A., KRIVYAKIN, G.K., BULGAKOV, A., LEVY, Y., BERÁNEK, J., NAGISETTY, S. S., BRYKNAR, Z., BULGAKOVA, N. M., GEYDT, P.V., POPOV, A. A. Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications. In: LUKICHEV, V.F., RUDENKO, K.V., eds. Proceedings of SPIE - The International Society for Optical Engineering. Bellingham: SPIE, 2022, č. článku 1215702. ISSN 0277-786X. Available: doi: 10.1117/12.2622731.