Number of the records: 1
Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications
- 1.VOLODIN, V.A., KRIVYAKIN, G.K., BULGAKOV, Alexander, LEVY, Yoann, BERÁNEK, Jiří, NAGISETTY, Siva S., BRYKNAR, Z., BULGAKOVA, Nadezhda M., GEYDT, P.V., POPOV, A. A. Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications. In: LUKICHEV, V.F., RUDENKO, K.V., eds. Proceedings of SPIE - The International Society for Optical Engineering. Bellingham: SPIE, 2022, č. článku 1215702. ISSN 0277-786X. Available: doi: 10.1117/12.2622731.
Number of the records: 1