Microstructural modifications induced in Si.sup.+-./sup. implanted yttria-stabilised zirconia: a combined RBS-C, XRD and Raman investigation

Mikšová, Romana; Malinský, Petr; Cutroneo, Mariapompea; Holý, V.; Sofer, Z.; Cajzl, J.; Debelle, A.; Nowicki, L.; Macková, Anna

doi:https://dx.doi.org/10.1039/d1cp04901a

Number of the records: 1

Microstructural modifications induced in Si.sup.+-./sup. implanted yttria-stabilised zirconia: a combined RBS-C, XRD and Raman investigation

1.

SYSNO ASEP	0555813
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Microstructural modifications induced in Si^+- implanted yttria-stabilised zirconia: a combined RBS-C, XRD and Raman investigation
Author(s)	Mikšová, Romana (UJF-V)_{RID, ORCID, SAI} Malinský, Petr (UJF-V)_{RID, ORCID, SAI} Cutroneo, Mariapompea (UJF-V)_{ORCID, RID, SAI} Holý, V. (CZ) Sofer, Z. (CZ) Cajzl, J. (CZ) Debelle, A. (FR) Nowicki, L. (PL) Macková, Anna (UJF-V)_{RID, ORCID, SAI}
Number of authors	9
Source Title	Physical Chemistry Chemical Physics. - : Royal Society of Chemistry - ISSN 1463-9076 Roč. 24, č. 10 (2022), s. 6290-6301
Number of pages	12 s.
Publication form	Print - P
Language	eng - English
Country	GB - United Kingdom
Keywords	microstructural modifications ; radiation damage ; RBS-C, XRD and Raman investigation
OECD category	Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
R&D Projects	EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Research Infrastructure	CANAM II - 90056 - Ústav jaderné fyziky AV ČR, v. v. i.
Method of publishing	Limited access
Institutional support	UJF-V - RVO:61389005
UT WOS	000762433600001
EID SCOPUS	85126072623
DOI	10.1039/d1cp04901a
Annotation	The structural differences in (100)-, (110)- and (111)-oriented cubic yttria-stabilised zirconia (YSZ) single crystals after implantation with 2 MeV Si+ ions at the fluences of 5 x 10(15), 1 x 10(16) and 5 x 10(16) cm(-2) were studied using Rutherford backscattering spectrometry in the channelling mode (RBS-C), X-ray diffraction (XRD) and Raman spectroscopy. The RBS-C results show that the damage accumulation in the 110 direction exhibits a lower level of disorder (<0.3) than the other orientations (<0.6) and it seems that the (110) crystallographic orientation is the most resistant to radiation damage. The experimental results from the RBS measurement were compared with the results from the XRD measurements. The XRD data were analysed using the standard two-beam dynamical X-ray diffraction theory and the pure isotropic strain was deduced from the fit for the fluence of 5 x 10(15) cm(-2). It was shown that the maximum value of the isotropic strain does not depend on the surface orientation. The increase in signal intensity at similar to 689 cm(-1) is probably related to an increase in implantation defects such as oxygen vacancies.
Workplace	Nuclear Physics Institute
Contact	Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
Year of Publishing	2023
Electronic address	https://doi.org/10.1039/D1CP04901A

Number of the records: 1