Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements

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SYSNO	0546598
Title	Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements
Author(s)	Izsák, Tibor (FZU-D)_ORCID Vanko, G. (SK) Babčenko, Oleg (FZU-D)_ORCID Vincze, A. (SK) Vojs, M. (SK) Zaťko, B. (SK) Kromka, Alexander (FZU-D)_{RID, ORCID, SAI}
Corespondence/senior	Izsák, Tibor - Korespondující autor
Source Title	Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 273, Nov. (2021). - : Elsevier
Article number	115434
Document Type	Článek v odborném periodiku
Grant	LM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	8X20035 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
	CZ.02.1.01/0.0/0.0/16_019/0000760, XE - EU countries
	EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	CH
Keywords	polycrystalline diamond * GaN * Raman spectroscopy * stress * SIMS
URL	https://doi.org/10.1016/j.mseb.2021.115434
Permanent Link	http://hdl.handle.net/11104/0323195

Number of the records: 1