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Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements
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SYSNO ASEP 0546598 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements Author(s) Izsák, Tibor (FZU-D) ORCID
Vanko, G. (SK)
Babčenko, Oleg (FZU-D) ORCID
Vincze, A. (SK)
Vojs, M. (SK)
Zaťko, B. (SK)
Kromka, Alexander (FZU-D) RID, ORCID, SAINumber of authors 7 Article number 115434 Source Title Materials Science and Engineering B-Advanced Functional Solid-State Materials. - : Elsevier - ISSN 0921-5107
Roč. 273, Nov. (2021)Number of pages 6 s. Language eng - English Country CH - Switzerland Keywords polycrystalline diamond ; GaN ; Raman spectroscopy ; stress ; SIMS Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Coating and films R&D Projects LM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) 8X20035 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000702850700008 EID SCOPUS 85114516498 DOI 10.1016/j.mseb.2021.115434 Annotation The effect of silicon oxynitride (SiON) layer on the thermally-induced stress of diamond-coated AlGaN/GaN heterostructures was studied by Raman and SIMS spectroscopy. Diamond films (0.8 or 2.8 µm in thickness) were grown by MWCVD on selected areas of AlGaN/GaN/Si substrates with SiON interlayer. The stress in diamond became tensile for the thinner strip in the range of 0÷0.5 GPa and compressive for the thicker strip in the range of -0.6 ÷ -0.1 GPa both measured at temperatures ranging from 50 to 400°C. The applied SiON interlayer positively influenced the induced stress (Δstress decreased by about 0.14 GPa compared to the sample without SiON) independently on the thickness of the diamond film. SIMS depth profiling was applied to analyse the influence of diamond CVD on the AlGaN/GaN interface of SiON passivated samples. As observed, the hydrogen and carbon atoms were trapped in the SiON which acted as a stop layer. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2022 Electronic address https://doi.org/10.1016/j.mseb.2021.115434
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