Targeted chemical pressure yields tuneable millimetre-wave dielectric

0539813 - FZÚ 2021 RIV GB eng J - Journal Article
Dawley, N.M. - Marksz, E.J. - Hagerstrom, A.M. - Olsen, G.H. - Holtz, M.E. - Goian, Veronica - Kadlec, Christelle - Zhang, J. - Lu, X. - Drisko, J.A. - Uecker, R. - Ganschow, S. - Long, Ch.J. - Booth, J.C. - Kamba, Stanislav - Fennie, C.J. - Muller, D.A. - Orloff, N.D. - Schlom, D. G.
Targeted chemical pressure yields tuneable millimetre-wave dielectric.
Nature Materials. Roč. 19, Feb (2020), s. 176-181. ISSN 1476-1122. E-ISSN 1476-4660
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA18-09265S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : microwave dielectrics * tunability * thin film * strain
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 43.841, year: 2020
Method of publishing: Limited access
https://doi.org/10.1038/s41563-019-0564-4

We employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into todayś best millimetre-wave tuneable dielectric, the epitaxially strained 50-nm-thick n=6 (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. The resulting atomically engineered superlattice material, (SrTiO3)n-m(BaTiO3)mSrO, enables low-loss, tuneable dielectric properties to be achieved with lower epitaxial strain and a 200% improvement in the figure of merit at commercially relevant millimetre-wave frequencies.
Permanent Link: http://hdl.handle.net/11104/0317515