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Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM
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SYSNO 0506256 Title Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM Author(s) Lee, Lok Y. (GB)
Frentrup, M. (GB)
Vacek, Petr (UFM-A) ORCID, RID
Kappers, Menno J. (GB)
Wallis, David J. (GB)
Oliver, Rachel A. (GB)Source Title Journal of Applied Physics. Roč. 125, č. 10 (2019). - : AIP Publishing Article number 105303 Document Type Článek v odborném periodiku Grant EF16_027/0008056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic LQ1601 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic Institutional support UFM-A - RVO:68081723 Language eng Country US Keywords Epilayers * Gallium nitride * High resolution transmission electron microscopy * III-V semiconductors * Silicon carbide * Stacking faults * X ray diffraction * Zinc sulfide URL http://orca.cf.ac.uk/120129/1/Wallis%20D%20-%20Investigation%20of%20stacking%20faults%20in%20MOVPE-grown%20....pdf Permanent Link http://hdl.handle.net/11104/0300842
Number of the records: 1