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Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM
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SYSNO ASEP 0506256 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM Author(s) Lee, Lok Y. (GB)
Frentrup, M. (GB)
Vacek, Petr (UFM-A) ORCID, RID
Kappers, Menno J. (GB)
Wallis, David J. (GB)
Oliver, Rachel A. (GB)Number of authors 6 Article number 105303 Source Title Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
Roč. 125, č. 10 (2019)Number of pages 8 s. Language eng - English Country US - United States Keywords Epilayers ; Gallium nitride ; High resolution transmission electron microscopy ; III-V semiconductors ; Silicon carbide ; Stacking faults ; X ray diffraction ; Zinc sulfide Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering OECD category Electrical and electronic engineering R&D Projects EF16_027/0008056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LQ1601 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Open access Institutional support UFM-A - RVO:68081723 UT WOS 000461370200024 EID SCOPUS 85062849811 DOI 10.1063/1.5082846 Annotation X-ray diffraction and bright-field transmission electron microscopy are used to investigate the distribution and density of {111}-type stacking faults (SFs) present in a heteroepitaxial zincblende GaN epilayer with high phase purity, grown on a 3C-SiC/Si (001) substrate by metalorganic vapour-phase epitaxy. It is found that the 4 degrees miscut towards the [110] direction of the substrate, which prevents the formation of undesirable antiphase domains, has a profound effect on the relative densities of SFs occurring on the different {111} planes. The two orientations of SFs in the [-110] zone, where the SF inclination angle with the GaN/SiC interface is altered by the 4 miscut, show a significant difference in density, with the steeper (111) SFs being more numerous than the shallower (-1-11) SFs by a factor of similar to 5 at 380 nm from the GaN/SiC interface. In contrast, the two orientations of SFs in the [110] zone, which is unaffected by the miscut, have densities comparable with the (-1-11) SFs in the [-110] zone. A simple model, simulating the propagation and annihilation of SFs in zincblende GaN epilayers, reproduces the presence of local SF bunches observed in TEM data. The model also verifies that a difference in the starting density at the GaN/SiC interface of the two orientations of intersecting {111} SFs in the same zone reduces the efficiency of SF annihilation. Hence, (111) SFs have a higher density compared with SFs on the other three {111} planes, due to their preferential formation at the GaN/SiC interface caused by the miscut. Workplace Institute of Physics of Materials Contact Yvonna Šrámková, sramkova@ipm.cz, Tel.: 532 290 485 Year of Publishing 2020 Electronic address http://orca.cf.ac.uk/120129/1/Wallis%20D%20-%20Investigation%20of%20stacking%20faults%20in%20MOVPE-grown%20....pdf
Number of the records: 1