Number of the records: 1
Modeling of silicon in femto second laser-induced modification regimes: accounting for ambipolar diffusion
- 1.Derrien, Thibault - Bulgakova, Nadezhda M.
Modeling of silicon in femto second laser-induced modification regimes: accounting for ambipolar diffusion.
Nonlinear Optics and Applications X. Bellingham: SPIE, 2017 - (Bertolotti, M.; Haus, J.; Zheltikov, A.), Roč. 10228 (2017), s. 1-13, č. článku 102280E. Proceedings of SPIE, 10228. ISBN 978-1-5106-0957-0. ISSN 0277-786X.
[Nonlinear Optics and Applications Conference /7./. Prague (CZ), 24.04.2017-25.04.2017]
OECD category: Optics (including laser optics and quantum optics)
http://hdl.handle.net/11104/0276863
Number of the records: 1