Modeling of silicon in femto second laser-induced modification regimes: accounting for ambipolar diffusion

DERRIEN, Thibault, BULGAKOVA, Nadezhda M. Modeling of silicon in femto second laser-induced modification regimes: accounting for ambipolar diffusion. In: BERTOLOTTI, M., HAUS, J.W., ZHELTIKOV, A.M., eds. Nonlinear Optics and Applications X. Bellingham: SPIE, 2017, roč. 10228 (2017), s. 1-13, č. článku 102280E. Proceedings of SPIE, 10228. ISBN 978-1-5106-0957-0. ISSN 0277-786X. Available: doi: 10.1117/12.2265671