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AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures
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SYSNO ASEP 0436952 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures Author(s) Vanko, G. (SK)
Vojs, M. (SK)
Ižák, Tibor (FZU-D) RID
Potocký, Štěpán (FZU-D) RID, ORCID
Choleva, P. (AT)
Marton, M. (SK)
Rýger, I. (SK)
Dzuba, J. (SK)
Lalinský, T. (SK)Source Title ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems. - Bratislava : Slovak University of Technology, 2014 / Breza J. ; Donoval D. ; Vavrinsky E. - ISBN 978-1-4799-5474-2 Pages s. 263-266 Number of pages 4 s. Publication form Print - P Action International Conference on Advanced Semiconductor Devices and Microsystems /10./ Event date 20.10.2014-22.10.2014 VEvent location Smolenice Country SK - Slovakia Event type WRD Language eng - English Country SK - Slovakia Keywords GaN membranes ; diamond films ; thermal management ; MWCVD ; SEM Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GP14-16549P GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation In this work, we present an application of NCD layers as backside cooling for AlGaN/GaN heterostructures grown on Si substrates. In this case, diamond nucleation is the most limiting technological step due to low mechanical stability of GaN membranes. We observed that standard nucleation techniques (ultrasonic seeding or bias enhanced nucleation) caused cracking of the membranes or not appropriate nucleation efficiency in the Z-depth of structures. Therefore we implemented PVA polymer consisting of diamond powder as seeding composite which resulted in a successful growth of diamond thin film. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2015
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