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AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures

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    SYSNO ASEP0436952
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeConference Paper
    TitleAlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures
    Author(s) Vanko, G. (SK)
    Vojs, M. (SK)
    Ižák, Tibor (FZU-D) RID
    Potocký, Štěpán (FZU-D) RID, ORCID
    Choleva, P. (AT)
    Marton, M. (SK)
    Rýger, I. (SK)
    Dzuba, J. (SK)
    Lalinský, T. (SK)
    Source TitleASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems. - Bratislava : Slovak University of Technology, 2014 / Breza J. ; Donoval D. ; Vavrinsky E. - ISBN 978-1-4799-5474-2
    Pagess. 263-266
    Number of pages4 s.
    Publication formPrint - P
    ActionInternational Conference on Advanced Semiconductor Devices and Microsystems /10./
    Event date20.10.2014-22.10.2014
    VEvent locationSmolenice
    CountrySK - Slovakia
    Event typeWRD
    Languageeng - English
    CountrySK - Slovakia
    KeywordsGaN membranes ; diamond films ; thermal management ; MWCVD ; SEM
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGP14-16549P GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    AnnotationIn this work, we present an application of NCD layers as backside cooling for AlGaN/GaN heterostructures grown on Si substrates. In this case, diamond nucleation is the most limiting technological step due to low mechanical stability of GaN membranes. We observed that standard nucleation techniques (ultrasonic seeding or bias enhanced nucleation) caused cracking of the membranes or not appropriate nucleation efficiency in the Z-depth of structures. Therefore we implemented PVA polymer consisting of diamond powder as seeding composite which resulted in a successful growth of diamond thin film.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2015
Number of the records: 1  

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