Strain accommodation within porous buffer layers in heteroepitaxial growth

0396817 - ÚFE 2014 RIV US eng C - Conference Paper (international conference)
Grym, Jan - Nohavica, Dušan - Gladkov, Petar - Vaniš, Jan - Hulicius, Eduard - Pangrác, Jiří - Pacherová, Oliva - Piksová, K.
Strain accommodation within porous buffer layers in heteroepitaxial growth.
ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems. New York: IEEE, 2012 - (Hascik, S.; Osvald, J.), s. 235-238. ISBN 978-1-4673-1197-7.
[9th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM). Smolenice Castle (SK), 11.11.2012-15.11.2012]
R&D Projects: GA MŠMT 7AMB12GR034; GA ČR GAP108/10/0253
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : Epitaxial growth * Gaas * Porous substrates
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D)

We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with highly lattice mismatched In(x)Ga(1-x) As layers
Permanent Link: http://hdl.handle.net/11104/0224518