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Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs
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SYSNO ASEP 0387856 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs Author(s) Nohavica, Dušan (URE-Y)
Grym, Jan (URE-Y)
Gladkov, Petar (URE-Y)
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Jarchovský, Zdeněk (URE-Y)Number of authors 6 Source Title International Journal of Nanotechnology - ISSN 1475-7435
Roč. 9, 8-9 (2012), s. 732-745Number of pages 14 s. Language eng - English Country GB - United Kingdom Keywords growth ; nanoporus Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering Subject RIV - cooperation Institute of Physics - Solid Matter Physics ; Magnetism R&D Projects GAP108/10/0253 GA ČR - Czech Science Foundation (CSF) Institutional support URE-Y - RVO:67985882 ; FZU-D - RVO:68378271 UT WOS 000303800500006 DOI 10.1504/IJNT.2012.046751 Annotation Both crystallographically oriented and current line oriented pore networks in InP and GaAs are created by electrochemical dissolution. Heat treatment of InP pores at 650 degrees C and of GaAs pores at 700-850 degrees C converts them into microcavities maintaining almost the same crystallographic direction. As a transition between micro/nanopores and micro cavities the lamellar structures are obtained. Mass transport is responsible for the pore conversion. The effect of 'anion' vapour pressure is proved to be crucial for the microcavity formation since it influences the mass transport during the heat treatment. Electron microscopy and photoluminescence experiments reveal the absence of significant extended defects, both after the formation of pores and cavities. The capability of improved structural quality of homo-and hetero-epitaxially overgrown films on porous InP is demonstrated by liquid phase epitaxy growth of InP and InAs. Overgrowth of the porous GaAs substrates by ternary GaInAs layers with different lattice mismatch was realised by metal organic vapour phase epitaxy Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2013
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