Number of the records: 1
Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs
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$a 10.1504/IJNT.2012.046751 $2 DOI 100 $a 20130117d m y slo 03 ba 101 0-
$a eng $d eng 102 $a GB 200 1-
$a Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs 215 $a 14 s. 463 -1
$1 001 cav_un_epca*0311631 $1 011 $a 1475-7435 $e 1741-8151 $1 200 1 $a International Journal of Nanotechnology $v Roč. 9, 8-9 (2012), s. 732-745 610 0-
$a growth 610 0-
$a nanoporus 700 -1
$3 cav_un_auth*0101713 $a Nohavica $b Dušan $i 003 $j Technology of Materials for Electronics and Optoelectronics $p URE-Y $4 070 $T Ústav fotoniky a elektroniky AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0101663 $a Grym $b Jan $i 003 $j Technology of Materials for Electronics and Optoelectronics $p URE-Y $w Synthesis and characterization of nanomaterials $4 070 $T Ústav fotoniky a elektroniky AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0101660 $a Gladkov $b Petar $i 004 $j Diagnostics of Materials for Electronics and Optoelectronics $p URE-Y $4 070 $T Ústav fotoniky a elektroniky AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0100250 $a Hulicius $b Eduard $i Polovodiče $j Semiconductors $p FZU-D $w Semiconductors $4 070 $T Fyzikální ústav AV ČR, v. v. i. 701 -1
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$3 cav_un_auth*0098040 $a Jarchovský $b Zdeněk $i 003 $j Technology of Materials for Electronics and Optoelectronics $p URE-Y $4 070 $T Ústav fotoniky a elektroniky AV ČR, v. v. i.
Number of the records: 1