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Light trapping abilities of silicon thin films measured by Raman spectroscopy
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SYSNO ASEP 0386621 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Light trapping abilities of silicon thin films measured by Raman spectroscopy Author(s) Ledinský, Martin (FZU-D) RID, ORCID, SAI
Hakl, M. (CZ)
Ondič, Lukáš (FZU-D) RID, ORCID
Ganzerová, K. (CZ)
Vetushka, Aliaksi (FZU-D) RID, ORCID
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Kočka, Jan (FZU-D) RID, ORCID, SAISource Title Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition. - München : WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG, 2012 / Nowak S. - ISBN 3-936338-28-0 Pages s. 2431-2433 Number of pages 3 s. Publication form Medium - C Action European Photovoltaic Solar Energy Conference and Exhibition (PVSEC) /17./ Event date 24.09.2012-28.09.2012 VEvent location Frankfurt Country DE - Germany Event type EUR Language eng - English Country DE - Germany Keywords light trapping ; polycrystalline silicon (Si) ; thin film solar cell ; Raman spectoscopy Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects 7E10061 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2011026 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) FR-TI2/736 GA MPO - Ministry of Industry and Trade (MPO) CEZ AV0Z10100521 - FZU-D (2005-2011) DOI 10.4229/27thEUPVSEC2012-3CV.2.24 Annotation Raman spectroscopy is used as a tool for measuring the light trapping abilities of thin crystalline silicon films for photovoltaic applications. Comparison of samples with different scattering characteristic is reported and the significant difference in the absolute Raman intensities is explained by light trapping effects. Raman spectroscopy is proposed as a promising tool for in-line characterization of silicon thin films during fabrication of solar cell modules. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2013
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