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Scanning Electron Microscopy with Samples in an Electric Field
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SYSNO ASEP 0385193 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Scanning Electron Microscopy with Samples in an Electric Field Author(s) Frank, Luděk (UPT-D) RID, SAI, ORCID
Hovorka, Miloš (UPT-D)
Mikmeková, Šárka (UPT-D) RID, SAI, ORCID
Mikmeková, Eliška (UPT-D) RID
Müllerová, Ilona (UPT-D) RID, SAI, ORCID
Pokorná, Zuzana (UPT-D) RID, ORCID, SAINumber of authors 6 Source Title Materials. - : MDPI
Roč. 5, č. 12 (2012), s. 2731-2756Number of pages 26 s. Language eng - English Country CH - Switzerland Keywords scanning electron microscopy ; slow electrons ; low energy SEM ; low energy STEM ; cathode lens Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects GAP108/11/2270 GA ČR - Czech Science Foundation (CSF) TE01020118 GA TA ČR - Technology Agency of the Czech Republic (TA ČR) ED0017/01/01 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support UPT-D - RVO:68081731 UT WOS 000312608500016 EID SCOPUS 84876478039 DOI 10.3390/ma5122731 Annotation The high negative bias of a sample in a scanning electron microscope constitutes the “cathode lens” with a strong electric field just above the sample surface. This mode offers a convenient tool for controlling the landing energy of electrons down to units or even fractions of electronvolts with only slight readjustments of the column. Moreover, the field accelerates and collimates the signal electrons to earthed detectors above and below the sample, thereby assuring high collection efficiency and high amplification of the image signal. One important feature is the ability to acquire the complete emission of the backscattered electrons, including those emitted at high angles with respect to the surface normal. The cathode lens aberrations are proportional to the landing energy of electrons so the spot size becomes nearly constant throughout the full energy scale. At low energies and with their complete angular distribution acquired, the backscattered electron images offer enhanced information about crystalline and electronic structures thanks to contrast mechanisms that are otherwise unavailable. Examples from various areas of materials science are presented. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2013
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