Number of the records: 1
InGaAsP/InP infrared light emitting diodes prepared by liquid phase epitaxy from rare-earth treated melt
- 1.0346227 - ÚFE 2011 PL eng C - Conference Paper (international conference)
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
InGaAsP/InP infrared light emitting diodes prepared by liquid phase epitaxy from rare-earth treated melt.
XXXVIII International School and Conference on the Physics of Semiconductors, ”Jaszowiec” 2009. Krynica-Zdroj: Polish Academy of Sciences, Institute of Physics, 2009, s. 129-129.
[XXXVIII International School and Conference on the Physics of Semiconductors, ”Jaszowiec” 2009. Krynica-Zdroj (PL), 19.06.2009-26.06.2009]
R&D Projects: GA ČR GA102/09/1037; GA ČR(CZ) GP102/08/P617
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * Rare-earth elements * III-V semiconductors
Subject RIV: JJ - Other Materials
Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III–V semiconductors due to REs high affinity toward shallow impurities.We demonstrate this purifying effect on the preparation of InGaAsP layers and InGaAsP/InP double heterostructure LEDs by liquid phase epitaxy with Pr admixture to the growth melt.
Permanent Link: http://hdl.handle.net/11104/0187303
Number of the records: 1