Two-dimensional dopant profiling with low energy SEM

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SYSNO ASEP	0308202
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Two-dimensional dopant profiling with low energy SEM
Title	Tvorba dvourozměrných profilů dopantu s níkoenergiovým SEM
Author(s)	Mika, Filip (UPT-D)_{RID, SAI, ORCID} Frank, Luděk (UPT-D)_{RID, SAI, ORCID}
Source Title	Journal of Microscopy. - : Wiley - ISSN 0022-2720 Roč. 230, č. 1 (2008), s. 76-83
Number of pages	8 s.
Language	eng - English
Country	GB - United Kingdom
Keywords	dopant contrast ; low energy SEM ; semiconductors
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
R&D Projects	GA102/05/2327 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z20650511 - UPT-D (2005-2011)
UT WOS	000254614600011
Annotation	The scanning electron microscope has proven itself efficient for determining dopant concentrations in semiconductors. Contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, intimate examination shows a low reproducibility of the contrast level for a particular local difference between the doping rates. Data about dynamic behaviour of the dopant contrast and its dependence on the status of the sample surface are presented.
Workplace	Institute of Scientific Instruments
Contact	Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
Year of Publishing	2008

Number of the records: 1