Characterisation of InP layers prepared by the LPE method with Pr and Nd addition in the growth melt

0303868 - URE-Y 20010046 CZ eng K - Conference Paper (Czech conference)
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Characterisation of InP layers prepared by the LPE method with Pr and Nd addition in the growth melt.
Prague: Czech Technical University, 2001. CTU Reports., Vol. 5, 2001 Sp. Issue. ISBN 80-01-02335-4. In: Proceedings of Workshop 2001., s. 450-451
[Workshop 2001. Prague (CZ), 05.02.2001-07.02.2001 (W)]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Institutional research plan: CEZ:AV0Z2067918
Keywords : liquid phase epitaxial growth * rare earth compounds * III-V semiconductors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

High purity InP epitaxial layers were grown by LPE from the melt conataining, besides essential components, also rare-earth elements admixture. The layers were examined by SEM, low temperature PL spectroscopy, C-V measurements and temperature dependent Hall effect. The behaviour and the impact of Pr and Nd were compared. The concentration of shallow impurities was reduced by up to three orders of magnitude. PL spectra were markedly narrowed and fine spectral features were resolved.
Permanent Link: http://hdl.handle.net/11104/0114052