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P-type InP grown by LPE with rare earths: not intentional Ge acceptor doping
- 1.0303746 - URE-Y 20000133 GR eng I - Internal Report
Žďánský, Karel - Zavadil, Jiří - Procházková, Olga
P-type InP grown by LPE with rare earths: not intentional Ge acceptor doping.
Heraklion: FORTH, 2000. 1 s. EXMATEC 2000 - 5th International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies. Book of Abstract. s. P-053
R&D Projects: GA ČR GA102/99/0341
Institutional research plan: CEZ:AV0Z2067918
Keywords : semiconductor materials * luminescence
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
InP was grown by LPE on semi-insulating InP:Fe with Pr in the melt. Hall effect measurements revealed p-type conductivity with the hole concentration 6x10.sup.14.sup. cm.sup.-3.sup. and mobility 150 cm.sup.2.sup.V.sup.-1.sup.s.sup.-1.sup. at the room temperature. The energy 223 meV of the dominant acceptor was determined from the temperature dependence of the hole concentration. A photoluminescence line was found at 1.195 eV, close to the previously estimated no-phonon line of Ge acceptor. Hence Ge acceptors cause the p-type conductivity of the grown InP.
Permanent Link: http://hdl.handle.net/11104/0113933
Number of the records: 1