Lasers with thin strained InAs layers in GaAs - electron-optical characterisation and operation at elevated temperatures

0134479 - FZU-D 20030379 RIV IT eng C - Conference Paper (international conference)
Mačkal, Adam - Hazdra, P. - Hulicius, Eduard - Oswald, Jiří - Pangrác, Jiří - Melichar, Karel - Hospodková, Alice - Šimeček, Tomislav
Lasers with thin strained InAs layers in GaAs - electron-optical characterisation and operation at elevated temperatures.
European Workshop on Metalorganic Vapour Phase Epitaxy /10./. Lecce: Ecotekne Congress Centre, 2003, s. 12-18. ISBN 88-8305-007-X.
[European Workshop on Metalorganic Vapour Phase Epitaxy (10./. Lecce (IT), 08.06.2003-11.06.2003]
R&D Projects: GA AV ČR IAA1010318; GA AV ČR KSK1010104
Institutional research plan: CEZ:AV0Z1010914; CEZ:MSM 212300014
Keywords : strained quantum well * InAs * GaAs * electroluminescence * photoabsorption * polarization
Subject RIV: BM - Solid Matter Physics ; Magnetism

Contribution presents the electroluminescence, photoabsorption and polarisation properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures (above 25 o C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperatures operation range.
Permanent Link: http://hdl.handle.net/11104/0032380