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Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems
- 1.0575228 - FZÚ 2024 RIV US eng J - Journal Article
Cheah, E. - Haxell, D.Z. - Schott, R. - Zeng, P. - Paysen, E. - ten Kate, S.C. - Coraiola, M. - Landstetter, M. - Zadeh, A.B. - Trampert, A. - Sousa, M. - Riel, H. - Nichele, F. - Wegscheider, W. - Křížek, Filip
Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems.
Physical Review Materials. Roč. 7, č. 7 (2023), č. článku 073403. ISSN 2475-9953. E-ISSN 2475-9953
R&D Projects: GA ČR(CZ) GM22-22000M
Institutional support: RVO:68378271
Keywords : InAs shallow quantum well * superconductor semiconductor interface * epitaxial Al * hybrid 2DEG
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.4, year: 2022
Method of publishing: Open access
In situ synthesized semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures and two-dimensional electron gases. In contrast to the well-developed semiconductor parts of the hybrid materials, the direct effect of the crystal nanotexture of Al films on the electron transport still remains unclear. This is mainly due to the complex epitaxial relation between Al and the semiconductor. Here, we present characterization of Al thin films grown on shallow InAs two-dimensional electron gas systems by molecular beam epitaxy. Using a growth approach based on an intentional roughening of the epitaxial interface, we demonstrate growth of grain-boundary-free Al.
Permanent Link: https://hdl.handle.net/11104/0348792
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