Ultrafast long-distance electron-hole plasma expansion in GaAs mediated by stimulated emission and reabsorption of photons

0574361 - FZÚ 2024 RIV US eng J - Journal Article
Troha, Tinkara - Klimovič, F. - Ostatnický, T. - Kadlec, Filip - Kužel, Petr - Němec, Hynek
Ultrafast long-distance electron-hole plasma expansion in GaAs mediated by stimulated emission and reabsorption of photons.
Physical Review Letters. Roč. 133, č. 22 (2023), č. článku 226301. ISSN 0031-9007. E-ISSN 1079-7114
R&D Projects: GA ČR(CZ) GA23-05640S
Institutional support: RVO:68378271
Keywords : ultrafast dynamics * plasma expansion * semiconductors * terahertz spectroscopy * GaAs
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 8.6, year: 2022
Method of publishing: Limited access
https://doi.org/10.1103/PhysRevLett.130.226301

Electron-hole plasma expansion with velocities exceeding c/50 and lasting over 10 ps at 300 K wasevidenced by time-resolved terahertz spectroscopy. This regime, in which the carriers are driven over >30μm is governed by stimulated emission due to low-energy electron-hole pair recombination and reabsorption of the emitted photons outside the plasma volume. At low temperatures a speed of c/10 was observed in the regime where the excitation pulse spectrally overlaps with emitted photons, leading tostrong coherent light-matter interaction and optical soliton propagation effects.
Permanent Link: https://hdl.handle.net/11104/0344700