Doping of the hydrogen-passivated Si(100) electronic structure through carborane adsorption studied using density functional theory

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SYSNO	0549123
Title	Doping of the hydrogen-passivated Si(100) electronic structure through carborane adsorption studied using density functional theory
Author(s)	Hladík, Martin (FZU-D)_ORCID Fejfar, Antonín (FZU-D)_{RID, ORCID, SAI} Vázquez, Héctor (FZU-D)_ORCID
Corespondence/senior	Hladík, Martin - Korespondující autor Vázquez, Héctor - Korespondující autor
Source Title	Physical Chemistry Chemical Physics. Roč. 23, č. 36 (2021), s. 20379-20387. - : Royal Society of Chemistry
Document Type	Článek v odborném periodiku
Grant	CZ.02.1.01/0.0/0.0/16_026/0008382, CZ - Czech Republic
	EF16_026/0008382 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	LM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	GB
Keywords	doping * silicon * carborane * electronic structure * injection barrier * density functional theory
URL	https://doi.org/10.1039/D1CP01654G
Permanent Link	http://hdl.handle.net/11104/0325148

Number of the records: 1