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Doping of the hydrogen-passivated Si(100) electronic structure through carborane adsorption studied using density functional theory

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    SYSNO ASEP0549123
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleDoping of the hydrogen-passivated Si(100) electronic structure through carborane adsorption studied using density functional theory
    Author(s) Hladík, Martin (FZU-D) ORCID
    Fejfar, Antonín (FZU-D) RID, ORCID, SAI
    Vázquez, Héctor (FZU-D) ORCID
    Number of authors3
    Source TitlePhysical Chemistry Chemical Physics. - : Royal Society of Chemistry - ISSN 1463-9076
    Roč. 23, č. 36 (2021), s. 20379-20387
    Number of pages9 s.
    Languageeng - English
    CountryGB - United Kingdom
    Keywordsdoping ; silicon ; carborane ; electronic structure ; injection barrier ; density functional theory
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsEF16_026/0008382 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    LM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Research Infrastructuree-INFRA CZ - 90140 - CESNET, zájmové sdružení právnických osob
    Method of publishingLimited access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000693175500001
    EID SCOPUS85115875836
    DOI10.1039/D1CP01654G
    AnnotationAdsorption of molecular materials with tailored chemical properties represents a new and promising avenue to non-destructively dope silicon. Dithiocarboranes possess large permanent dipoles and readily form stable monolayers on a variety of substrates. Here we use density functional theory to investigate the doping of hydrogen-passivated Si(100) substrates through the adsorption of dithiocarborane molecules. We find that dithiocarboranes can both physisorb and chemisorb on the substrate. Chemisorbed structures arise when a S atom in the molecular linker group replaces a surface H atom. We establish the formation of these Si-molecule bonds and characterize their mechanical and thermal stability. … Our work shows that molecular adsorbates having large electrostatic dipoles are a promising strategy to non-destructively dope semiconductor substrates.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2022
    Electronic addresshttps://doi.org/10.1039/D1CP01654G
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