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Doping of the hydrogen-passivated Si(100) electronic structure through carborane adsorption studied using density functional theory
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$a Doping of the hydrogen-passivated Si(100) electronic structure through carborane adsorption studied using density functional theory 215 $a 9 s. 463 -1
$1 001 cav_un_epca*0254721 $1 011 $a 1463-9076 $e 1463-9084 $1 200 1 $a Physical Chemistry Chemical Physics $v Roč. 23, č. 36 (2021), s. 20379-20387 $1 210 $c Royal Society of Chemistry 610 $a doping 610 $a silicon 610 $a carborane 610 $a electronic structure 610 $a injection barrier 610 $a density functional theory 700 -1
$3 cav_un_auth*0406990 $a Hladík $b Martin $p FZU-D $i Tenké vrstvy a nanostruktury $j Thin Films and Nanostructures $z K $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0100196 $a Fejfar $b Antonín $p FZU-D $i Tenké vrstvy a nanostruktury $j Thin Films and Nanostructures $w Thin Films and Nanostructures $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0311381 $a Vázquez $b Héctor $p FZU-D $i Povrchy a molekulární struktury $j Surfaces and Molecular Structures $w Low-Dimensional Atomic and Molecular Structures $y ES $z K $T Fyzikální ústav AV ČR, v. v. i. 856 $u https://doi.org/10.1039/D1CP01654G $9 RIV
Number of the records: 1