In situ monitoring of electrical resistivity and plasma during pulsed laser deposition growth of ultra-thin silver films

Novotný, Michal; Fitl, Přemysl; Irimiciuc, S.A.; Bulíř, Jiří; More Chevalier, Joris; Fekete, Ladislav; Hruška, Petr; Chertopalov, Sergii; Vrňata, M.; Lančok, Ján

doi:https://dx.doi.org/10.1063/5.0057317

Number of the records: 1

In situ monitoring of electrical resistivity and plasma during pulsed laser deposition growth of ultra-thin silver films

1.

SYSNO ASEP	0546089
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	In situ monitoring of electrical resistivity and plasma during pulsed laser deposition growth of ultra-thin silver films
Author(s)	Novotný, Michal (FZU-D)_{RID, ORCID, SAI} Fitl, Přemysl (FZU-D)_{RID, ORCID} Irimiciuc, S.A. (RO) Bulíř, Jiří (FZU-D)_{RID, ORCID, SAI} More Chevalier, Joris (FZU-D)_ORCID Fekete, Ladislav (FZU-D)_{RID, ORCID} Hruška, Petr (FZU-D)_ORCID Chertopalov, Sergii (FZU-D)_ORCID Vrňata, M. (CZ) Lančok, Ján (FZU-D)_{RID, ORCID}
Number of authors	10
Article number	085301
Source Title	Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979 Roč. 130, č. 8 (2021)
Number of pages	12 s.
Language	eng - English
Country	US - United States
Keywords	silver ; thin films ; insitu measurement
Subject RIV	BM - Solid Matter Physics ; Magnetism
OECD category	Condensed matter physics (including formerly solid state physics, supercond.)
R&D Projects	EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA20-21069S GA ČR - Czech Science Foundation (CSF)
Method of publishing	Limited access
Institutional support	FZU-D - RVO:68378271
UT WOS	000755022000001
EID SCOPUS	85113704562
DOI	10.1063/5.0057317
Annotation	Ultra-thin silver films of thicknesses of the order of 10 nm and less were prepared in different ambient conditions (vacuum, Ar, and N2) by pulsed laser deposition on glass and fused silica substrates. The in situ monitoring of electrical resistance of deposited films and optical emission spectroscopy of plasma were implemented as real-time analysis techniques. Change in the growth mechanism of the Ag layer in N2 ambient is expressed by an acceleration of the coalescence process, which shifts the percolation point toward lower mass thicknesses.The films prepared in vacuum and Ar ambient were found to be unstable for a final resistance in the range from 1 to 100MΩ while the films deposited in N2 revealed stable electrical resistance.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2022
Electronic address	https://doi.org/10.1063/5.0057317

Number of the records: 1