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Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells
- 1.Hájek, F., Hospodková, A., Hubáček, T., Oswald, J., Pangrác, J., Dominec, F., Horešovský, R., Kuldová, K. Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells. Journal of Luminescence. 2021, 236(Aug), 118127. ISSN 0022-2313. E-ISSN 1872-7883. Available: doi: 10.1016/j.jlumin.2021.118127.
Number of the records: 1