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Nanostructured layer enhancing light extraction from GaN-based scintillator using MOVPE
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SYSNO ASEP 0541758 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Nanostructured layer enhancing light extraction from GaN-based scintillator using MOVPE Author(s) Vaněk, Tomáš (FZU-D) ORCID
Hubáček, Tomáš (FZU-D) ORCID
Hájek, František (FZU-D) ORCID
Dominec, Filip (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Kuldová, Karla (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAINumber of authors 8 Source Title Proceedings of the 12th International Conference on Nanomaterials - Research & Application. - Ostrava : Tanger Ltd., 2021 - ISSN 2694-930X - ISBN 978-80-87294-98-7 Pages s. 12-17 Number of pages 6 s. Publication form Print - P Action International Conference NANOCON 2020 /12./ Event date 21.10.2020 - 23.10.2020 VEvent location Brno Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords MOVPE ; GaN ; light extraction ; SiNx ; scintillator Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 UT WOS 000664505500001 EID SCOPUS 85106044179 DOI 10.37904/nanocon.2020.3698 Annotation Light extraction (LE) efficiency of GaN buffer layer was studied by angle-resolved photoluminescence. We measured enhancement of light extraction efficiency (LEE) up to 154% by introducing the SiNx layer atop the GaN buffer and subsequent GaN light extraction layer (LEL) overgrowth. Morphological properties of GaN. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2022
Number of the records: 1