Number of the records: 1  

Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate

  1. 1.
    SYSNO0538001
    TitleElectrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate
    Author(s) Tiagulskyi, Stanislav (URE-Y)
    Yatskiv, Roman (URE-Y) RID, ORCID
    Faitová, Hana (URE-Y)
    Kučerová, Šárka (URE-Y)
    Vaniš, Jan (URE-Y) RID
    Grym, Jan (URE-Y)
    Source Title Materials Science in Semiconductor Processing. Roč. 107, 1 March (2020). - : Elsevier
    Article number104808
    Document TypeČlánek v odborném periodiku
    Grant GA17-00546S GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic
    GA17-00355S GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic
    Institutional supportURE-Y - RVO:67985882
    Languageeng
    CountryNL
    Keywords Current-voltage characteristics * Focused ion beam patterning * Nanoscale heterojunctions * ZnO nanorods
    URLhttps://doi.org/10.1016/j.mssp.2019.104808
    Permanent Linkhttp://hdl.handle.net/11104/0315834
    FileDownloadSizeCommentaryVersionAccess
    UFE 0538001.pdf01 MBOtherrequire
     
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.