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Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate
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SYSNO 0538001 Title Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate Author(s) Tiagulskyi, Stanislav (URE-Y)
Yatskiv, Roman (URE-Y) RID, ORCID
Faitová, Hana (URE-Y)
Kučerová, Šárka (URE-Y)
Vaniš, Jan (URE-Y) RID
Grym, Jan (URE-Y)Source Title Materials Science in Semiconductor Processing. Roč. 107, 1 March (2020). - : Elsevier Article number 104808 Document Type Článek v odborném periodiku Grant GA17-00546S GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic GA17-00355S GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic Institutional support URE-Y - RVO:67985882 Language eng Country NL Keywords Current-voltage characteristics * Focused ion beam patterning * Nanoscale heterojunctions * ZnO nanorods URL https://doi.org/10.1016/j.mssp.2019.104808 Permanent Link http://hdl.handle.net/11104/0315834 File Download Size Commentary Version Access UFE 0538001.pdf 0 1 MB Other require
Number of the records: 1