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Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate
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SYSNO ASEP 0538001 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate Author(s) Tiagulskyi, Stanislav (URE-Y)
Yatskiv, Roman (URE-Y) RID, ORCID
Faitová, Hana (URE-Y)
Kučerová, Šárka (URE-Y)
Vaniš, Jan (URE-Y) RID
Grym, Jan (URE-Y)Number of authors 6 Article number 104808 Source Title Materials Science in Semiconductor Processing. - : Elsevier - ISSN 1369-8001
Roč. 107, 1 March (2020)Number of pages 6 s. Publication form Print - P Language eng - English Country NL - Netherlands Keywords Current-voltage characteristics ; Focused ion beam patterning ; Nanoscale heterojunctions ; ZnO nanorods Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering OECD category Electrical and electronic engineering R&D Projects GA17-00546S GA ČR - Czech Science Foundation (CSF) GA17-00355S GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support URE-Y - RVO:67985882 UT WOS 000505017100013 EID SCOPUS 85074342993 DOI 10.1016/j.mssp.2019.104808 Annotation We study electronic transport in single vertically oriented n-type ZnO nanorods on p-type GaN substrates using a nanoprobe in a scanning electron microscope. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and the substrates locally modified by focused ion beam. The heterojunctions on focused ion beam-modified substrates show rectifying current-voltage characteristics, while the characteristics of the plain structures are symmetrical. Adsorption/desorption processes on the surface of ZnO nanorods strongly affect their electrical properties. We demonstrate that the electronic transport in the nanorods grown on focused ion beam-modified substrates is less sensitive to adsorption/desorption processes, which is related to their uniform nucleation and higher crystalline quality Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2021 Electronic address https://doi.org/10.1016/j.mssp.2019.104808
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