Number of the records: 1
Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate
- 1.Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Kučerová, Šárka - Vaniš, Jan - Grym, Jan
Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate.
Materials Science in Semiconductor Processing. Roč. 107, 1 March (2020), č. článku 104808. ISSN 1369-8001. E-ISSN 1873-4081
OECD category: Electrical and electronic engineering
Impact factor: 3.927, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.mssp.2019.104808
http://hdl.handle.net/11104/0315834
Number of the records: 1