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Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate
- 1.Tiagulskyi, S., Yatskiv, R., Faitová, H., Kučerová, Š., Vaniš, J., Grym, J. Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate. Materials Science in Semiconductor Processing. 2020, 107(1 March), 104808. ISSN 1369-8001. E-ISSN 1873-4081. Available: doi: 10.1016/j.mssp.2019.104808.
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