Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate

TIAGULSKYI, Stanislav, YATSKIV, Roman, FAITOVÁ, Hana, KUČEROVÁ, Šárka, VANIŠ, Jan, GRYM, Jan. Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate. Materials Science in Semiconductor Processing. 2020, 107(1 March), 104808. ISSN 1369-8001. E-ISSN 1873-4081. Available: doi: 10.1016/j.mssp.2019.104808.