Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature

Number of the records: 1

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SYSNO	0501495
Title	Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature
Author(s)	Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Dominec, Filip (FZU-D)_{RID, ORCID} Hubáček, Tomáš (FZU-D)_ORCID Zíková, Markéta (FZU-D)_RID Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Oswald, Jiří (FZU-D)_{RID, ORCID} Kuldová, Karla (FZU-D)_{RID, ORCID} Vetushka, Aliaksi (FZU-D)_{RID, ORCID} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI}
Source Title	ICMOVPE XIX - Technical Digest. S. 147-147. - Nara : Japanese Association for Crystal Growth, 2018 / Miyake H.
Conference	19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX, 03.06.2018 - 08.06.2018, Nara
Document Type	Abstrakt
Grant	LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
	690599, XE - EU countries
	GA16-15569S GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	JP
Keywords	GaN buffer layer * scintillators * low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN QWs
Permanent Link	http://hdl.handle.net/11104/0293517

Number of the records: 1