Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature

Hospodková, Alice; Dominec, Filip; Hubáček, Tomáš; Zíková, Markéta; Pangrác, Jiří; Oswald, Jiří; Kuldová, Karla; Vetushka, Aliaksi; Hulicius, Eduard

Number of the records: 1

Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature

1.

SYSNO ASEP	0501495
Document Type	A - Abstract
R&D Document Type	The record was not marked in the RIV
R&D Document Type	Není vybrán druh dokumentu
Title	Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature
Author(s)	Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Dominec, Filip (FZU-D)_{RID, ORCID} Hubáček, Tomáš (FZU-D)_ORCID Zíková, Markéta (FZU-D)_RID Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Oswald, Jiří (FZU-D)_{RID, ORCID} Kuldová, Karla (FZU-D)_{RID, ORCID} Vetushka, Aliaksi (FZU-D)_{RID, ORCID} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI}
Number of authors	9
Source Title	ICMOVPE XIX - Technical Digest. - Nara : Japanese Association for Crystal Growth, 2018 / Miyake H. S. 147-147
Number of pages	1 s.
Publication form	Online - E
Action	19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX
Event date	03.06.2018 - 08.06.2018
VEvent location	Nara
Country	JP - Japan
Event type	WRD
Language	eng - English
Country	JP - Japan
Keywords	GaN buffer layer ; scintillators ; low dimensional structures ; V-pits ; metalorganic vapor phase epitaxy ; InGaN/GaN QWs
Subject RIV	BM - Solid Matter Physics ; Magnetism
OECD category	Condensed matter physics (including formerly solid state physics, supercond.)
R&D Projects	LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA16-15569S GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271
Annotation	Fast response of scintillators based on InGaN/GaN multiple quantum wells is compromised by slower luminescence defect band of unknown origin. SIMS analysis suggests that impurities concentrate in the quantum-well region, due to a drop in growth temperature. Using MOVPE we have prepared a set of samples with additional low-temperature buffer GaN layers to keep the impurities farther from the quantum wells. Our spectroscopic measurements have confirmed that this modification indeed results in enhancement of the fast luminescence component and reduction of the slow one. AFM images for two samples that differ mostly by morphology however points to another explanation, with formation of larger V-pits being the main reason for the luminescence improvement.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2019

Number of the records: 1