Characterization of polarizing semiconductor radiation detectors by laser-induced transient currents

0495539 - ÚFM 2019 RIV US eng J - Journal Article
Musiienko, A. - Grill, R. - Pekárek, J. - Belas, E. - Praus, P. - Pipek, J. - Dědic, V. - Elhadidy, Hassan
Characterization of polarizing semiconductor radiation detectors by laser-induced transient currents.
Applied Physics Letters. Roč. 111, č. 8 (2017), č. článku 082103. ISSN 0003-6951. E-ISSN 1077-3118
Institutional support: RVO:68081723
Keywords : cdznte detectors * cdte * Electric current measurement
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.495, year: 2017

A method is presented for the determination of the carrier drift mobility, lifetime, electric field distribution, and the dynamics of space charge formation, including the detrapping energy and capture cross-section of the dominant trap level in polarizing semiconductor radiation detectors. The procedure stems from the laser-induced transient current measurements done at a steady-state and pulsed biasing and at variable temperature. The approach allows us the direct determination of detector parameters from measured data without a complex mathematical treatment. The detrimental effect of surface carrier recombination often hampering the evaluation of detector properties is eliminated. Lifetime worsening caused by the space charge formation is included. The usefulness of the procedure is demonstrated on a CdTe radiation detector. Published by AIP Publishing.
Permanent Link: http://hdl.handle.net/11104/0289762