Analysis of heavily boron-doped diamond Raman spectrum

0492609 - FZÚ 2019 RIV CH eng J - Journal Article
Mortet, Vincent - Taylor, Andrew - Vlčková Živcová, Zuzana - Machon, D. - Frank, Otakar - Hubík, Pavel - Trémouilles, D. - Kavan, Ladislav
Analysis of heavily boron-doped diamond Raman spectrum.
Diamond and Related Materials. Roč. 88, Sep (2018), s. 163-166. ISSN 0925-9635. E-ISSN 1879-0062
R&D Projects: GA ČR GA13-31783S; GA MŠMT 7AMB16FR004; GA AV ČR(CZ) Fellowship J. E. Purkyně
Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně
Program: Fellowship J. E. Purkyně
Institutional support: RVO:68378271 ; RVO:61388955
Keywords : Raman spectroscopy * electronic Raman scattering * boron-doped diamond
OECD category: Condensed matter physics (including formerly solid state physics, supercond.); Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (UFCH-W)
Impact factor: 2.290, year: 2018

Lattice disorder, electronic Raman scattering, and Fano interaction effects are at the genesis of the Raman spectrum of heavily boron-doped diamond. However, no accurate unified description of this spectrum has been reported yet. In this work, we propose a novel analysis of the Raman spectrum of boron-doped diamond based on classical models of electronic Raman scattering and Fano effect. This new analysis shows that the Raman spectrum of boron-doped diamond results from the combination of electronic Raman scattering and its interaction, i.e. Fano effect, with the diamond phonon density of states and it confirms the 500cm−1 and 1200cm−1 bands originate from the phonon density of states.
Permanent Link: http://hdl.handle.net/11104/0286072