Number of the records: 1  

Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

  1. 1.
    SYSNO ASEP0487173
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleDetermination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films
    Author(s) Dragounová, Kateřina (FZU-D) ORCID
    Potůček, Z. (CZ)
    Potocký, Štěpán (FZU-D) RID, ORCID
    Bryknar, Z. (CZ)
    Kromka, Alexander (FZU-D) RID, ORCID, SAI
    Number of authors5
    Source TitleJournal of Electrical Engineering - Elektrotechnický časopis. - : Slovenská technická univerzita v Bratislave - ISSN 1335-3632
    Roč. 68, č. 1 (2017), s. 74-78
    Number of pages5 s.
    Languageeng - English
    CountrySK - Slovakia
    Keywordssilicon-vacancy centres ; photoluminescence ; low temperature ; diamond ; CVD
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGA14-04790S GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    UT WOS000396613900010
    DOI10.1515/jee-2017-0010
    AnnotationIn this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11 300 K and used to determine the temperature dependence of the zero-phonon-line full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2018
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.