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Planar defects and dislocations in C40 and FCC lattices
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SYSNO ASEP 0486449 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Planar defects and dislocations in C40 and FCC lattices Author(s) Paidar, Václav (FZU-D) RID, ORCID Number of authors 1 Source Title MATERIALS STRUCTURE & MICROMECHANICS OF FRACTURE VII. - Zurich : Trans Tech Publications, 2014 / Šandera P. - ISSN 1013-9826 - ISBN 978-3-03785-934-6 Pages s. 67-70 Number of pages 4 s. Publication form Print - P Action MSMF 7 - International Conference on Materials Structure and Micromechanics of Fracture /7./ Event date 01.07.2013 - 03.07.2013 VEvent location Brno Country CZ - Czech Republic Event type WRD Language eng - English Country CH - Switzerland Keywords transition metal silicides ; C40 lattices ; stacking fault like defects ; dislocation cores Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Institutional support FZU-D - RVO:68378271 UT WOS 000336694400011 EID SCOPUS 84891837819 DOI 10.4028/www.scientific.net/KEM.592-593.67 Annotation Atomic planes at three different positions ABC form the stacking along the 111 directions in the FCC lattice and similarly along the 0001 hexagonal axis in the C40 structure in transition metal silicides. However, the structures of suicides are constituted of several stacking of identical atomic planes at four different positions: AB in C11(b) structures of e.g. MoSi2, ABC in C40 structures of e.g. VSi2 and ABDC in C54 structures of e.g. TiSi2 disilicides. The occurrence of the fourth position essentially influences the properties of defects and consequently the mechanical properties of C40 materials.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018
Number of the records: 1