Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process

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SYSNO	0466446
Title	Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process
Author(s)	Babchenko, O. (SK) Vanko, G. (SK) Dzuba, J. (SK) Ižák, Tibor (FZU-D)_RID Vojs, M. (SK) Lalinský, T. (SK) Kromka, Alexander (FZU-D)_{RID, ORCID, SAI}
Source Title	ASDAM 2016. S. 157-160. - Danvers : IEEE, 2016 / Haščík Š. ; Dzuba J. ; Vanko G.
Conference	International conference on advanced semiconductor devices and microsystems /11./, 13.11.2016 - 16.11.2016, Smolenice
Document Type	Konferenční příspěvek (zahraniční konf.)
Grant	GP14-16549P GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic
	SAV-16-02, CZ - Czech Republic, SK - Slovakia
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	US
Keywords	diamond * GaN * HEMT * transistor * metallization
Permanent Link	http://hdl.handle.net/11104/0264737

Number of the records: 1